Researchers of the American research university, MIT have a transistor developed that, according to them, a record set in the field of electron mobility. The MIT’ers convert to this end, germanium instead of silicon.
The transistor that the staff of the Massachusetts Institute of Technology developed, is a p-type transistor: a faster n-type transistor must still be built to the technique in commercial chips can be used to create. The MIT-transistor would have about four times as high carriermobiliteit, in this case holes, as commercial transistors. Compared with experimental transistors would be the new transistor twice as fast.
The speed is due to the semiconductor material used: the MIT-employees do not use silicon but germanium. That metal had better ‘compress’, a technique that straining is called: the researchers used to do this, multiple layers of substrate of silicon and silicon-germanium to the atoms closer and closer together to address. In commercial chips is strained silicon.
The transistors of MIT’s Microsystems Technology Laboratories have a trigate design, where the channel is surrounded by a three-dimensional gate: this technique uses Intel for its Ivy Bridge processors. This keeps the gate of the transistor without large leakage currents to be able to switch. According to the researchers, would be the germanium-technology in future generations of processors can be applied.
