SanDisk together with Toshiba, memory chips for flash memory, developed on 19nm is produced. The nand chips with three bits per memory cell failure for solid state drives have a capacity of 128 gigabit, either 16GB.
The 19nm chips that SanDisk and Toshiba jointly managed to produce only 170 square millimeters in size. Still can 128Gb or 16GB, of data written. The small featuresize of the mlc memory helps, of course, but SanDisk squeezes three bits in each memory cell failure, a technique that the X3-technique is called. Such a triple-level-cell memory is generally less reliable than mlc memory with two bits per cell, but it speaks SanDisk not.
One of the advantages of the production of nand chips with a storage capacity of 128Gb, the simplified packaging. Normally be different chips opeengestapeld in order to provide sufficient capacity within a certain size, but the 128Gb chips can single layer can be used. That lowers the cost of production of products with the onboard memory. According to SanDisk the new 19nm chips, write speeds up to 18MB per second. The mass production of them has already begun, just as the mass production of a 64Gb variant, which is for micro-sd cards was developed.