Nikon has partnered with a company out of Singapore to jointly lithografieapparatuur to develop that smaller transistors can be produced than has been possible until now. In a test lab will 193nm lithography will be developed.
The research activities of Nikon and A*STAR Institute of Microelectronics to be accommodated in an r&d laboratory. The Japanese and Singaporeans will be working lithographic techniques to develop 193nm light to use for semiconductor manufacturing. It would argonfluoride-lasers are used for emitting deep-ultraviolet light to wafers to produce. This requires techniques such as multiple patterning and self-organization play a role.
With the lithographic techniques to wafers with transistors less than 20nm can be produced. The smallest transistors that are currently on 22nm are produced, with the current techniques difficult smaller can be made. Using techniques such as multi patterning and nanobolletjes that the fotomasker spontaneously form, have smaller transistors are made possible.
A competitive technique, that finer patterns can produce light with a smaller wavelength to use is also in development. That euv technology is, however, yet to come; competitor ASML has that technology in development, as Nikon itself.