Researchers from Samsung have improved its service life of resistive random access memory, is a relatively new type of non-volatile memory. The number of read and schrijfcycli would be expanded to a trillion, and the reram would also be more economical.
The operation of resistive ram, or r(e)ram, is somewhat similar to that of phase change memory. Cells in resistive memory can be under the influence of electricity in an insulating or conductive state. In an insulating dielectric by applying a high voltage, a conductive channel will be formed. That conductive channel by applying a second voltage to be pulled down, allowing the material again no power led. This phenomenon for data storage may be used.
Reram would in the long term as the successor of nand-memory can serve, but just as with that type of memory is the lifetime of reram is limited. The number of cycles to which the dielectric may be exposed, after all, is not infinite. Researchers from the Samsung Advanced Institute of Technology, in collaboration with the university of Sejong, a material developed that a trillion read – and schrijfcycli would be able to withstand. The dielectric consists of a bilayer of two types of tantaaloxide between two platinum electrodes is clamped.
The researchers have the dimensions of the memory cells is reduced from 50 by 50 µm to 30 to 30 nanometers. In addition, can the memory are stacked one upon another to the density to further increase. Test-arrays of ten by ten cells have proven to be able to data for ten years, at a temperature of 85 degrees, to hold. The switching time of the cells was 10ns and the memory would be more efficient than previously produced reram.
