IBM researchers in the Swiss Z lwa rich have a new type of memory improved in the near future must lead to very fast and reliable storage of data. The memory is based on pcm, or phase change memory.
The new type of pcm would be a breakthrough on the memory mean. The memory can flashchips that in ssd’s and storage for mobile equipment is eventually replaced. The researchers believe the memory in 2016 to be ready for commercial applications. In contrast to previously developed phase-change memory, IBM can with the new type different bits per memory cell failure save. Until now I succeeded only with one-bit-per cell pcm to keep it stable and reliable to read data from. The IBM researchers have two-bit-per-cell pcm developed that would be stable and not lose data.
The phase-change-memory works with a material that under the influence of converted into an electric pulse changes from a crystalline structure into an amorphous structure. This changes the internal resistance from low to high. A second, different pulse changes the state or phase back. This phenomenon provides adjustable resistors in the pcm material, so that the resistance can be used as a data carrier.
For data retention in their memory cells reliably, had the researchers find a way to get the internal resistance of the memory constant. They achieve this by algorithms to handle the changes in resistance of individual cells compares. Within certain areas will be the increase or decrease of resistance are identical, so variations are to calculate.
Also during writing the desired resistance is not always in one schrijfpuls be achieved. By the after the write measured resistance back to link and again a schrijfpuls to give it the desired resistance of the pc material is very precisely set. The two bits per cell can be achieved by different levels of resistance; four internal resistors that provide for a binary 00, 01, 10 and 11.
According to the researchers, it would write faster than flash memory. The datadichtheid and the scalability of the memory would be similar to flash memory. The number of schrijfcycli would be much higher; the researchers speak of millions of read – and schrijfcycli. The memory is tested using 90nm produced testchips, with cmos technology to be made. An endurance test for the retention has already been shown that the memory for at least five months of data can hold.