Researchers show in a new type of semiconductor material, that in very thin layers is being processed, a potential lwa le successor for traditional transistors with silicon are produced.
The new type of semiconductor material, which is classified in a class that metaaldichalcogeniden is called, consists of molybdenum disulphide. That MoS2 is between source-, gate – and drain-electrodes, made as a ‘two-dimensional’ layers. The crystalline layers are only three to four atoms, or 0.7 nanometers thick, and with fifteen layers of opeengestapeld for optimum performance. In addition to MoS2, other semiconductors of the same class can be used for transistors, provided that they have a band-gap.
The researchers made use of scandium as an electrode material, because this metal is a low contact resistance in the circuit. With the layered nanokristallen would it be possible for even smaller transistors to produce than is now possible with silicon-based cmos technology. According to the researchers, should be sought to the successors of traditional semiconductors, but will a single material are not sufficient. A hybrid material that has the desired properties of different semiconductors combines, would cmos technology should follow with ever smaller and more efficient transistors. 