NEC is developing spintronics-memory

The Japanese technology company NEC has worked together with the Tohoku university a new type of memory developed. This should be the speed of ram combine with the characteristics of flash memory: even without current data.

The new cam, or content addressable memory, was developed on the basis of spintronics. The memory makes use of the magnetic-spinmoment of electrons to store data. In cam, data is in vertical elements stored by means of magnetization of those elements. If the memory cells, no voltage gain, the magnetic effect is retained. In that way, would the memory as energy-efficient replacement for conventional ram service can do.

The cam would with ram similar speeds able to achieve thanks to the use of two elements per memory cell failure; one element is for read and other for write. The cam can be in the 5ns to be read and verstookt in addition to 9.4 mW. For the writing of data is a current of 200mA is required. The memory according to a cmos process, built and covers an area of 6.6 square micrometer per cell.

The memory, that NEC in collaboration with the Japanese Tohoku university developed, would not only be economical, but also easier. Per two memory cells are still only three transistors are needed instead of eight. This is achieved by using transistors to share and leads to a oppervlaktebesparing of 50 percent.